fast ir fet? irfh7185pbf hexfet ? power mosfet v dss 100 v r ds(on) max (@ v gs = 10v) 5.2 ? m ? ? ? q g (typical) 36 nc r g (typical) 1.2 ? ? i d (@t c (bottom) = 25c) 123 a ? ? pqfn 5x6 mm notes ? through ? are on page 8 base part number package type standard pack orderable part number ? ? form quantity irfh7185pbf pqfn 5mm x 6 mm tape and reel 4000 IRFH7185TRPBF features benefits low thermal resistance to pcb (<0.8c/w) increased power density low profile (<1.05 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1 increased reliability 100% rg tested increased reliability low r ds(on) (< 5.2m ? ) lower conduction losses applications ?? primary switch for high frequency 48v/60v telecom dc-dc power supplies ?? secondary side synchronous rectifier ?? hot swap and active o-ring absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 19 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 123 i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 78 i dm pulsed drain current ? 260 p d @t a = 25c power dissipation 3.6 w p d @t c(bottom) = 25c power dissipation 160 linear derating factor 0.03 w/c t j operating junction and -55 to + 150 c t stg storage temperature range 1 www.irf.com ? 2014 international rectifier submit datasheet feedback october 22. 2014 downloaded from: http:///
? irfh7185pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback october 22, 2014 ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? CCC 0.8 r ? jc (top) junction-to-case ? CCC 19 c/w r ? ja junction-to-ambient ? CCC 35 r ? ja (<10s) junction-to-ambient ? CCC 23 thermal resistance d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 100 CCC CCC v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient CCC 54 CCC mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 4.2 5.2 m ? v gs = 10v, i d = 50a ? v gs(th) gate threshold voltage 2.0 CCC 3.6 v v ds = v gs , i d = 150a ? v gs(th) gate threshold voltage coefficient CCC -5.3 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 80v, v gs = 0v i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v gfs forward transconductance 117 CCC CCC s v ds = 25v, i d = 50a q g total gate charge CCC 36 54 q gs1 pre-vth gate-to-source charge CCC 7.3 CCC ? v ds = 50v q gs2 post-vth gate-to-source charge CCC 2.7 CCC nc v gs = 10v q gd gate-to-drain charge CCC 11 CCC ? i d = 50a q godr gate charge overdrive CCC 15 CCC ? q sw switch charge (q gs2 + q gd ) CCC 13.7 CCC ? q oss output charge CCC 120 CCC nc v ds = 50v, v gs = 0v r g gate resistance CCC 1.2 CCC ? ? t d(on) turn-on delay time CCC 6.5 CCC v dd = 50v, v gs = 10v t r rise time CCC 9.9 CCC ns i d = 50a t d(off) turn-off delay time CCC 14 CCC ? r g = 1.0 ? t f fall time CCC 3.9 CCC ? c iss input capacitance CCC 2320 CCC v gs = 0v c oss output capacitance CCC 1070 CCC pf v ds = 50v c rss reverse transfer capacitance CCC 19 CCC ? ? = 1.0mhz diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current CCC CCC 123 a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 260 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC 0.8 1.3 v t j = 25c, i s = 50a, v gs =0v ? t rr reverse recovery time CCC 63 95 ns t j = 25c, i f = 50a, v dd = 50v q rr reverse recovery charge CCC 110 165 nc di/dt = 100a/s ? avalanche characteristics ??? parameter typ. max. units e as single pulse avalanche energy ? CCC 360 mj i ar avalanche current ? CCC 50 a downloaded from: http:///
? irfh7185pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback october 22, 2014 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.5v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 2.5 3.5 4.5 5.5 6.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v ? 60s pulse width fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 6. typical gate charge vs . gate-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 5. typical capacitance vs. drain-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 150c vgs top 15v 10v 7.0v 6.5v 6.0v 5.5v 5.0v bottom 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 0 5 10 15 20 25 30 35 40 45 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 50a downloaded from: http:///
? irfh7185pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback october 22, 2014 fig 8. maximum safe operating area 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 7. typical source-drain diode forward voltage 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 9. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a fig 10. threshold voltage vs. temperature fig 11. maximum effective transient thermal impedance, junction-to-case 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc l imited by package 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
? irfh7185pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback october 22, 2014 fig 12. typical avalanche current vs. pulse width fig 13. onCresistance vs. gate voltage fig 14. maximum avalanche energy vs. drain current 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 250 500 750 1000 1250 1500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 13a 21a bottom 50a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) downloaded from: http:///
? irfh7185pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback october 22, 2014 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms vdd ? downloaded from: http:///
? irfh7185pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback october 22, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techni ques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf downloaded from: http:///
? irfh7185pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback october 22, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ pqfn 5x6 outline "b" tape and reel ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standard at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 290h, r g = 50 ? , i as = 50a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf qualifiction information ? ? qualification level ? industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes note: for the most current drawing please refer to ir website at http://www.irf.com/package/ revision history date comments 3/13/2014 ?? updated the eas specification on pages 2 & 8. ?? updated the zth data used on figure 11, page 4. ?? updated figures 8, 11, 12, & 14 on pages 4 & 5. 6/26/2014 ?? update package limit current to 123a and fig.8 & 9 on page 4 09/25/14 ?? corrected min gfs from 280s to 117s on page 2 ?? updated pqfn 5 x6 outline b tape and reel on page 8 10/20/14 ?? typo errordeleted note # 6 from page 1 and diode characteristic table on page 2 bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape description typ e package 5 x 6 pqfn note: all dimension are nominal diameter reel qty wid th reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1 downloaded from: http:///
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